Tensile-strained germanium microdisk electroluminescence

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Tensile-strained germanium microdisk electroluminescence.

We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection is achieved with Schottky contacts on n-type doped germanium. We show that a biaxial tensile-strain up to 0.72% can be transferred by optimizing the carrier injection profile. The transferred strain is measured ...

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ژورنال

عنوان ژورنال: Optics Express

سال: 2015

ISSN: 1094-4087

DOI: 10.1364/oe.23.006722